DocumentCode :
1442723
Title :
Effects of defect propagation/growth on in-line defect-based yield prediction
Author :
Shindo, Wataru ; Nurani, Raman K. ; Strojwas, Andrzej J.
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
Volume :
11
Issue :
4
fYear :
1998
fDate :
11/1/1998 12:00:00 AM
Firstpage :
546
Lastpage :
551
Abstract :
This paper presents the importance of understanding defect propagation/growth and its impact on in-line yield prediction. In order to improve the prediction accuracy, impact of defect propagation and growth phenomena needs to be modeled and incorporated into yield prediction system. We developed a new yield prediction model by taking into account defect carryover. The empirical results of interlayer and intralayer defect propagation analysis using actual fabline data are presented
Keywords :
integrated circuit yield; semiconductor process modelling; critical area; defect carryover; defect growth; defect propagation; in-line inspection; semiconductor manufacturing; yield model; yield prediction; Accuracy; Area measurement; Inspection; Job shop scheduling; Logic; Manufacturing; Nonhomogeneous media; Predictive models; Semiconductor device manufacture; Semiconductor device modeling;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.728550
Filename :
728550
Link To Document :
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