Title :
Effects of defect propagation/growth on in-line defect-based yield prediction
Author :
Shindo, Wataru ; Nurani, Raman K. ; Strojwas, Andrzej J.
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
fDate :
11/1/1998 12:00:00 AM
Abstract :
This paper presents the importance of understanding defect propagation/growth and its impact on in-line yield prediction. In order to improve the prediction accuracy, impact of defect propagation and growth phenomena needs to be modeled and incorporated into yield prediction system. We developed a new yield prediction model by taking into account defect carryover. The empirical results of interlayer and intralayer defect propagation analysis using actual fabline data are presented
Keywords :
integrated circuit yield; semiconductor process modelling; critical area; defect carryover; defect growth; defect propagation; in-line inspection; semiconductor manufacturing; yield model; yield prediction; Accuracy; Area measurement; Inspection; Job shop scheduling; Logic; Manufacturing; Nonhomogeneous media; Predictive models; Semiconductor device manufacture; Semiconductor device modeling;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on