Expression of worst case using multivariate analysis in MOSFET model parameters

Author

Yasuda, Takeshi ; Kawashima, Hiroshi ; Hori, Satoshi ; Tanizawa, Motoaki ; Yamawaki, Masao ; Asai, Sotoju

Author_Institution

ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan

Volume

11

Issue

4

fYear

1998

fDate

11/1/1998 12:00:00 AM

Firstpage

569

Lastpage

574

Abstract

Device and circuit performance such as drain current and delay time varies stochastically due to uncontrollable factors in the fabrication processes. In this paper, a new method that represents the variation of the performance as worst case parameters in a MOSFET model is proposed. The variation of the performance can be expressed as a linear combination of several process-related parameters of the MOSFET model. Because of this fact, the worst case of parameters which corresponds to the worst case of performance can be directly and uniformly determined. Therefore, the calculation time of worst case parameters can be reduced by this method. The worst case parameter sets calculated by this method enable designers to estimate circuit performance variations accurately and easily. The capability of this method is verified in the variation analysis of drain current

Keywords

MOS integrated circuits; MOSFET; circuit simulation; delays; integrated circuit design; integrated circuit modelling; statistical analysis; MOSFET model parameters; calculation time; circuit performance variations; circuit simulation; delay time; drain current; multivariate analysis; process-related parameters; variation analysis; worst case parameters; Capacitance; Circuit optimization; Circuit simulation; Computer aided software engineering; Delay effects; Design methodology; Fabrication; MOSFET circuits; Performance analysis; Semiconductor devices;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.728553

Filename

728553