Title :
The effect of surface roughness on the radiative properties of patterned silicon wafers
Author :
Hebb, Jeffrey P. ; Jensen, Klavs F. ; Thomas, Jack
Author_Institution :
Dept. of Mech. Eng., MIT, Cambridge, MA, USA
fDate :
11/1/1998 12:00:00 AM
Abstract :
The radiative properties of patterned silicon wafers have a major impact on the two critical issues in rapid thermal processing (RTP), namely wafer temperature uniformity and wafer temperature measurement. The surface topography variation of the die area caused by patterning and the roughness of the wafer backside can have a significant effect on the radiative properties, but these effects are not well characterized. We report measurements of room temperature reflectance of a memory die, logic die, and various multilayered wafer backsides. The surface roughness of the die areas and wafer backsides is characterized using atomic force microscopy (AFM). These data are subsequently used to assess the effectiveness of thin film optics in providing approximations for the radiative properties of patterned wafers for RTP applications
Keywords :
atomic force microscopy; elemental semiconductors; integrated circuit measurement; radiative transfer; rapid thermal processing; reflectivity; silicon; spectral methods of temperature measurement; surface topography; temperature distribution; Si; atomic force microscopy; die area; multilayered wafer backsides; patterned wafers; radiative properties; rapid thermal processing; room temperature reflectance; surface roughness; surface topography variation; thin film optics; wafer temperature measurement; wafer temperature uniformity; Atomic force microscopy; Atomic measurements; Logic; Rapid thermal processing; Reflectivity; Rough surfaces; Silicon; Surface roughness; Surface topography; Temperature measurement;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
