A new four-level metal interconnect system tailored to an advanced 0.5-μm BiCMOS technology

Author

Wall, Ralph N. ; Olewine, Michael C. ; Augur, Roderick ; DiGregorio, John ; Colovos, Gus

Author_Institution

Philips Semicond., Albuquerque, NM, USA

Volume

11

Issue

4

fYear

1998

fDate

11/1/1998 12:00:00 AM

Firstpage

624

Lastpage

635

Abstract

A four-level metal interconnect strategy designed specifically for an advanced 0.5-μm BiCMOS technology is described. Unique features of the new technology include: (a) the use of a nonetchback spin on polymer, hydrogen silsesquioxane (HSQ), for planarization and for lower capacitance of the interlayer dielectric, (b) low-temperature polycrystalline silicon planarization by HSQ, (c) a thick fourth layer of metal for high quality spiral inductors, (d) a low cost chemical vapor tungsten deposition followed by sputtered hot aluminum for greater process simplicity and reliability by eliminating the tungsten etchback step, and (e) a preventive high refractive index, “silicon-rich” glass for device protection from the interconnect processes

Keywords

BiCMOS integrated circuits; capacitance; chemical vapour deposition; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; sputter deposition; 0.5 micron; BiCMOS technology; capacitance; chemical vapor deposition; device protection; four-level metal interconnect system; nonetchback spin on polymer; planarization; process simplicity; refractive index; reliability; spiral inductors; sputter deposition; BiCMOS integrated circuits; Capacitance; Chemical technology; Dielectric devices; Hydrogen; Planarization; Polymers; Silicon; Spirals; Tungsten;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.728560

Filename

728560