DocumentCode
1443101
Title
Embedded Memories: Progress and a Look into the Future
Author
Itoh, Kiyoo
Author_Institution
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Volume
28
Issue
1
fYear
2011
Firstpage
10
Lastpage
13
Abstract
Memories are categorized as embedded memories (e-memories) and stand-alone memories. E-memories favor high speed rather than low cost. In addition, they must maintain compatibility with the logic process, because they must be cofabricated on the same chip as the logic. In contrast, standalone memories give the first priority to low cost and thus high density rather than high speed. There are two types of e-memories: RAMs and ROMs (or "almost ROMs" such as flash memories). RAMs ensure an unlimited number of read and write cycles, and at present, RAMs come in two types: SRAMs, and DRAMs that necessitate refresh operations to retain the data stored at cell capacitors. ROMs ensure nonvolatility of stored data, exemplified by flash memories and ferroelectric RAMs (FeRAMs).
Keywords
DRAM chips; SRAM chips; embedded systems; flash memories; logic design; memory architecture; DRAM; FeRAM; RAM; ROM; SRAM; embedded memory; ferroelectric RAM; flash memory; logic process; random access memory; read cycle; read only memory; standalone memory; write cycle; Embedded systems; Memory; Technology forecasting; DRAM; FeRAM; MRAM; PCM; SRAM; STT-RAM; embedded memory; flash memory;
fLanguage
English
Journal_Title
Design & Test of Computers, IEEE
Publisher
ieee
ISSN
0740-7475
Type
jour
DOI
10.1109/MDT.2011.14
Filename
5708258
Link To Document