Title :
Modeling, Architecture, and Applications for Emerging Memory Technologies
Author_Institution :
Comput. Sci. & Eng. Dept., Pennsylvania State Univ., University Park, PA, USA
Abstract :
Spin-transfer torque RAM and phase-change RAM are vying to become the next-generation embedded memory, offering high speed, high density, and nonvolatility. This article discusses new opportunities and challenges presented by these two memory technologies with a particular emphasis on modeling and architecture design.
Keywords :
embedded systems; memory architecture; phase change memories; embedded memory; memory architecture; memory technology; phase-change RAM; spin-transfer torque RAM; Computer architecture; Memory; Modeling; Random access memory; NVM; PCRAM; RRAM; SRAM; STT-RAM; design and test; eDRAM; memory hierarchy; memory technologies; nonvolatile memory;
Journal_Title :
Design & Test of Computers, IEEE
DOI :
10.1109/MDT.2011.20
