Title :
Effects of field-dependent mobility on transfer efficiency in m.o.s. b.b.d. analogue delay lines
Author :
Haslett, J.W. ; Kejariwal, M.L.
Author_Institution :
University of Calgary, Department of Electrical Engineering, Calgary, Canada
fDate :
2/1/1977 12:00:00 AM
Abstract :
The effects of field-dependent mobility on transfer inefficiency due to intrinsic transfer limitations, dynamic-dram conductance and threshold-voltage modulation are calculated for an m.o.s. bucket-brigade delay line. The results show significant differences over previous theories at higher clock frequencies, where line performance is critical if quantisation errors are to be minimised in analogue applications.
Keywords :
analogue computer circuits; delay lines; metal-insulator-semiconductor devices; monolithic integrated circuits; BBD; MOS; analogue delay lines; bucket brigade delay line; dynamic drain conductance; field dependent mobility effects; intrinsic transfer limitations; metal oxide semiconductor; quantisation errors; threshold voltage modulation; transfer efficiency;
Journal_Title :
Electrical Engineers, Proceedings of the Institution of
DOI :
10.1049/piee.1977.0018
