Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO and OMEN

Author

Klimeck, Gerhard ; Luisier, Mathieu

Author_Institution

Purdue Univ., West Lafayette, IN, USA

Volume

12

Issue

2

fYear

2010

Firstpage

28

Lastpage

35

Abstract

Researchers have continually developed the Nanoelectronic Modeling (NEMO) toolset over the past 15 years to provide insight into nanoscale semiconductor devices that are dominated by quantum mechanical effects. The ability to represent realistically large devices on an atomistic basis has been the key element in matching experimental data and guiding experiments. The resulting insights led to the creation of OMEN, a new simulation engine.

Keywords

nanoelectromechanical devices; quantum theory; semiconductor device models; NEMO toolset; OMEN simulation engine; atomistic basis; atomistic modeling; nanoelectronic modeling; nanoscale semiconductor device; quantum mechanical effect; Atomic layer deposition; Costs; Design engineering; Geometry; Moore´s Law; Nanoscale devices; Organic materials; Quantum mechanics; Semiconductor devices; Semiconductor materials; Nanoelectronics; atomistic modeling and simulation; computer-aided design; high-performance computing; nanoscale semiconductor devices; nanotechnology; parallel computing;

fLanguage

English

Journal_Title

Computing in Science & Engineering

Publisher

ieee

ISSN

1521-9615

Type

jour

DOI

10.1109/MCSE.2010.32

Filename

5432296