DocumentCode :
1443287
Title :
Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO and OMEN
Author :
Klimeck, Gerhard ; Luisier, Mathieu
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
Volume :
12
Issue :
2
fYear :
2010
Firstpage :
28
Lastpage :
35
Abstract :
Researchers have continually developed the Nanoelectronic Modeling (NEMO) toolset over the past 15 years to provide insight into nanoscale semiconductor devices that are dominated by quantum mechanical effects. The ability to represent realistically large devices on an atomistic basis has been the key element in matching experimental data and guiding experiments. The resulting insights led to the creation of OMEN, a new simulation engine.
Keywords :
nanoelectromechanical devices; quantum theory; semiconductor device models; NEMO toolset; OMEN simulation engine; atomistic basis; atomistic modeling; nanoelectronic modeling; nanoscale semiconductor device; quantum mechanical effect; Atomic layer deposition; Costs; Design engineering; Geometry; Moore´s Law; Nanoscale devices; Organic materials; Quantum mechanics; Semiconductor devices; Semiconductor materials; Nanoelectronics; atomistic modeling and simulation; computer-aided design; high-performance computing; nanoscale semiconductor devices; nanotechnology; parallel computing;
fLanguage :
English
Journal_Title :
Computing in Science & Engineering
Publisher :
ieee
ISSN :
1521-9615
Type :
jour
DOI :
10.1109/MCSE.2010.32
Filename :
5432296
Link To Document :
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