Title :
Layout Proximity Effects and Modeling Alternatives for IC Designs
Author :
Lin, Xi-Wei ; Moroz, Victor
Author_Institution :
Silicon Eng. Group, Synopsys, Mountain View, CA, USA
Abstract :
Layout-dependent variations significantly affect device modeling, model extraction, and design solutions. A novel approach is proposed in this article to seamlessly integrate physical models of lithography, strained Si, and ion implantation processes, with layout geometry for efficient model generation.
Keywords :
integrated circuit layout; integrated circuit modelling; ion implantation; proximity effect (lithography); IC designs; device modeling; ion implantation process; layout geometry; layout proximity effects; layout-dependent variations; lithography; model extraction; modeling alternatives; CMOS integrated circuits; CMOS technology; Compressive stress; Integrated circuit layout; Integrated circuit modeling; Lithography; Optical scattering; Proximity effect; Semiconductor device modeling; Silicon; CMOS; compact model; design and test; extraction; layout; lithography; mobility; proximity; stress; threshold voltage; variability;
Journal_Title :
Design & Test of Computers, IEEE
DOI :
10.1109/MDT.2010.48
