Title :
Compact Modeling of Variation in FinFET SRAM Cells
Author :
Lu, Darsen D. ; Lin, Chung-Hsun ; Niknejad, Ali M. ; Hu, Chenming
Author_Institution :
Univ. of California, Berkeley, CA, USA
Abstract :
FinFET technology is a possible solution to achieve a better power/performance trade-off for SRAM cells. This article provides a comprehensive analysis of the variations in FinFET devices, their impact on SRAM stability, and a statistical design procedure for FinFET SRAM cells.
Keywords :
MOSFET; SRAM chips; statistical analysis; FinFET SRAM cells; FinFET devices; compact modeling; statistical design procedure; CMOS technology; Circuit simulation; Doping; FinFETs; Fluctuations; Random access memory; Resource description framework; Semiconductor device modeling; Stability; Threshold voltage; FinFET; SRAM; compact modeling; design and test; design for manufacturing; multigate MOSFETs; variability;
Journal_Title :
Design & Test of Computers, IEEE
DOI :
10.1109/MDT.2010.39
