• DocumentCode
    1443618
  • Title

    Modeling, analysis, and design of RF LDMOS devices using harmonic-balance device simulation

  • Author

    Rotella, F.M. ; Ma, G. ; Yu, Z. ; Dutton, R.W.

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., CA, USA
  • Volume
    48
  • Issue
    6
  • fYear
    2000
  • fDate
    6/1/2000 12:00:00 AM
  • Firstpage
    991
  • Lastpage
    999
  • Abstract
    This paper describes how device simulation may be used for the modeling, analysis, and design of radio-frequency (RF) laterally diffused metal-oxide-semiconductor (LDMOS) transistors. Improvements to device analysis needed to meet the requirements of RF devices are discussed. Key modeling regions of the LDMOS device are explored and important physical effects are characterized. The LDMOS model is compared to dc and small-signal ac measurements for calibration purposes. Using the calibrated model, large-signal accuracy is verified using harmonic distortion simulation, and intermodulation analysis. Predictive analysis and a study of the structure´s parasitic components are also presented. Load-pull simulation is used to analyze matching network effects to determine the best choices for device impedance matching
  • Keywords
    MOSFET; UHF field effect transistors; harmonic distortion; impedance matching; intermodulation; microwave field effect transistors; semiconductor device measurement; semiconductor device models; RF LDMOS devices; calibration purposes; dc measurements; device impedance matching; harmonic distortion simulation; harmonic-balance device simulation; intermodulation analysis; large-signal accuracy; laterally diffused metal-oxide-semiconductor; load-pull simulation; matching network effects; parasitic components; physical effects; small-signal ac measurements; Analytical models; Boundary conditions; Circuit simulation; Computational modeling; Electrodes; Equations; Harmonic analysis; Medical simulation; Physics; Radio frequency;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.904736
  • Filename
    904736