DocumentCode :
1443654
Title :
Design optimization and characterization of high-gain GaInP/GaAs HBT distributed amplifiers for high-bit-rate telecommunication
Author :
Mohammadi, Saeed ; Park, Jae-Woo ; Pavlidis, Dimitris ; Guyaux, Jean-Louis ; Garcia, Jean Charles
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume :
48
Issue :
6
fYear :
2000
fDate :
6/1/2000 12:00:00 AM
Firstpage :
1038
Lastpage :
1044
Abstract :
The design methodology, processing technology, and characterization of high-gain GaInP/GaAs heterojunction-bipolar-transistor-based distributed amplifiers are described in this paper. Distributed amplifiers with different active cells and number of stages have been compared for high-gain (>12 dB) and high-bandwidth (>25 GHz) performance. Based on the results, a three-stage attenuation-compensated distributed amplifier with a flat gain (S21) of 12.7 dB over a bandwidth of 27.5 GHz was successfully fabricated and tested. Eye-diagram tests at 10 Gb/s show very open eye characteristics with no signal skewing. The amplifier achieves a minimum noise figure of 4 dB at 3 GHz and a sensitivity of -25 dBm for 10-Gb/s nonreturn-to-zero 215-1 pseudorandom bit sequence with a bit error rate of 10-9
Keywords :
III-V semiconductors; MMIC amplifiers; bipolar MMIC; bipolar analogue integrated circuits; circuit optimisation; compensation; digital communication; distributed amplifiers; error statistics; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit design; optical communication equipment; wideband amplifiers; 10 Gbit/s; 12.7 dB; 25 to 27.5 GHz; 4 dB; BER; GaInP-GaAs; HBT distributed amplifiers; NRZ pseudorandom bit sequence; bit error rate; characterization; design methodology; design optimization; heterojunction bipolar transistor; high-bit-rate telecommunication; high-gain distributed amplifiers; processing technology; three-stage attenuation-compensated amplifier; Design optimization; Distributed amplifiers; Gallium arsenide; Heterojunction bipolar transistors; Optical amplifiers; Optical attenuators; Optical receivers; Optical sensors; Photodiodes; Stimulated emission;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.904742
Filename :
904742
Link To Document :
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