Title :
High-isolation CPW MEMS shunt switches. 2. Design
Author :
Muldavin, Jeremy B. ; Rebeiz, Gabriel M.
Author_Institution :
Radiation Lab., Michigan Univ., Ann Arbor, MI, USA
fDate :
6/1/2000 12:00:00 AM
Abstract :
For pt.1 see ibid., vol.48, no.6, p.1045-1052 (2000). In this paper, the second of two parts, the equivalent RLC model of the shunt switch is used in the design of tuned two- and four-bridge “cross” switches from 10 to 40 GHz. The cross switch attained an insertion loss of less than 0.3-0.6 dB, a return loss below -20 dB from 22 to 38 GHz in the up state, and a down-state isolation of 45-50 dB with only 1.5 pF of down-state capacitance (Cd). Also, an X-band microelectromechanical system (MEMS) switch with an insertion loss of less than 0.2 dB and an isolation of 35 dB is presented. This is done by inductively tuning the LC series resonance of the shunt switch. The MEMS bridge height is 1.5-2.5 μm, resulting in a pull-down voltage of 15-25 V. Application areas are in low-loss high-isolation communication and radar
Keywords :
capacitance; coplanar waveguide components; equivalent circuits; losses; membranes; micromechanical devices; microwave switches; millimetre wave devices; modelling; resonance; tuning; -20 dB; 0.2 dB; 0.3 to 0.6 dB; 1.5 pF; 1.5 to 2.5 micron; 10 to 40 GHz; 15 to 25 V; LC series resonance tuning; MEMS shunt switch design; X-band MEMS switch; down-state capacitance; equivalent RLC model; high-isolation CPW MEMS switches; insertion loss; low-loss communication; low-loss radar; membrane switches; microelectromechanical switch; return loss; tuned four-bridge cross switches; tuned two-bridge cross switches; Bridge circuits; Capacitance; Communication switching; Coplanar waveguides; Insertion loss; Microelectromechanical systems; Micromechanical devices; Resonance; Switches; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
