DocumentCode :
1443698
Title :
160-GHz Passively Mode-Locked AlGaInAs 1.55- 
m Strained Quantum-Well Compound Cavity Laser
Author :
Hou, Lianping ; Stolarz, Piotr ; Dylewicz, Rafal ; Haji, Moss ; Javaloyes, Julien ; Qiu, Bocang ; Bryce, A. Catrina
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
Volume :
22
Issue :
10
fYear :
2010
fDate :
5/15/2010 12:00:00 AM
Firstpage :
727
Lastpage :
729
Abstract :
The first demonstration of harmonic mode-locked operation from a monolithic semiconductor laser comprising a compound cavity formed by twin deeply etched intracavity reflectors based on 1.55-μm AlGaInAs strained quantum-well material is presented. Nearly transform-limited Gaussian pulses are generated at 160-GHz repetition rate with a 1.67-ps pulse duration.
Keywords :
Gaussian distribution; III-V semiconductors; aluminium compounds; etching; gallium compounds; indium compounds; laser cavity resonators; laser mode locking; optical pulse generation; quantum well lasers; AlGaInAs; deep etching; frequency 160 GHz; intracavity reflectors; monolithic semiconductor laser; passive mode-locking; strained quantum-well compound cavity laser; time 1.67 ps; transform-limited Gaussian pulses; wavelength 1.55 μm; AlGaInAs; compound cavity; harmonic mode-locked laser (MLL); inductively coupled plasma (ICP) deep etching; pulse generation; strained quantum well;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2045228
Filename :
5432958
Link To Document :
