A mechanism for hydrogen-related transient effects in carbon-doped AlGaAs/GaAs heterostructure bipolar transistors

Author

Chi, Jim Y. ; Lu, Ke

Author_Institution

M/A-COM Res. & Dev. Center, AMP-M/A-COM Inc., Lowell, MA, USA

Volume

19

Issue

11

fYear

1998

Firstpage

408

Lastpage

410

Abstract

The transient phenomenon in carbon-doped AlGaAs/GaAs HBT´s has been found to reoccur after a brief thermal annealing under no bias. The temperature and the current dependencies have been studied with HBT´s made with MOCVD grown wafers. The experimental data ran be explained by a model based on thermal decomposition of C-H complexes during annealing and electron captures by hydrogen ions under minority-carrier injection.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; annealing; carbon; electron traps; gallium arsenide; heterojunction bipolar transistors; minority carriers; semiconductor device measurement; semiconductor device reliability; transient analysis; 200 to 300 C; AlGaAs-GaAs:C; AlGaAs/GaAs:C HBTs; C-H complex decomposition; H-related transient effects; MOCVD grown wafers; current dependence; electron capture; heterostructure bipolar transistors; minority-carrier injection; model; reliability; temperature dependence; thermal annealing; transient phenomenon; Annealing; Bipolar transistors; Doping; Gallium arsenide; Heterojunction bipolar transistors; Hydrogen; MOCVD; Packaging; Temperature dependence; Testing;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.728895

Filename

728895