Title :
LDMOS Transistor High-Frequency Performance Enhancements by Strain
Author :
Chen, Kun-Ming ; Huang, Guo-Wei ; Chen, Bo-Yuan ; Chiu, Chia-Sung ; Hsiao, Chih-Hua ; Liao, Wen-Shiang ; Chen, Ming-Yi ; Yang, Yu-Chi ; Wang, Kai-Li ; Liu, Chee Wee
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
fDate :
4/1/2012 12:00:00 AM
Abstract :
The effects of mechanical stress on the dc and high-frequency performances of laterally diffused MOS (LDMOS) transistors with different layout structures were investigated by using the wafer bending method. A 3.1% peak cutoff frequency (fT) enhancement is achieved for the multifinger device under 0.051% biaxial tensile strain. For LDMOS with annular layout, the fT enhancement is increased to 3.7% due to the various channel directions. Our results suggest the strain technology can be adopted in LDMOS for RF applications. The transconductance and gate capacitance were also extracted to clearly demonstrate the fT variations.
Keywords :
MOSFET; bending; stress effects; stress-strain relations; LDMOS transistor; annular layout; biaxial tensile strain; gate capacitance; high-frequency performance enhancements; laterally diffused MOS transistors; layout structures; mechanical stress effect; multifinger device; peak cutoff frequency enhancement; strain technology; transconductance; wafer bending method; Layout; Logic gates; Performance evaluation; Radio frequency; Silicon; Strain; Transistors; Annular layout; biaxial tensile strain; cutoff frequency; laterally diffused MOS (LDMOS); mechanical stress;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2182494
