DocumentCode
1443801
Title
A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices
Author
Lu, Yang ; Gao, Bin ; Fu, Yihan ; Chen, Bing ; Liu, Lifeng ; Liu, Xiaoyan ; Kang, Jinfeng
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
Volume
33
Issue
3
fYear
2012
fDate
3/1/2012 12:00:00 AM
Firstpage
306
Lastpage
308
Abstract
A physical-based simplified model is presented to quantify the resistive switching behavior of oxide-based resistive random access memory (RRAM). In this model, the analytical expressions of the RESET time of RRAM devices and the correlated resistance in high-resistance states are presented and experimentally verified. Based on the extracted physical-based model parameters from measured data, the resistive switching characteristics of oxide-based RRAM devices can be evaluated.
Keywords
random-access storage; RESET time; oxide-based RRAM device; oxide-based resistive random access memory device; physical-based model parameter extraction; physical-based simplified model; resistive switching behavior; Data models; Force; Hafnium compounds; Predictive models; Resistance; Spontaneous emission; Switches; Conductive filament (CF); RESET time; hafnium oxide; nonvolatile memory; resistive random access memory (RRAM); resistive switching;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2178229
Filename
6148256
Link To Document