Title :
Application of plasma immersion ion implantation doping to low-temperature processed poly-Si TFTs
Author :
Yeh, Ching-Fa ; Chen, Tai-Ju ; Liu, Chung ; Shao, Jiquan ; Cheung, Nathan W.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
This work applied, for the first time, plasma immersion ion implantation (PIII) for source/drain doping on low-temperature processed polysilicon thin-film transistors (poly-Si TFTs). Experimental results indicate that PIII doping can provide adequate dopant concentration and junction depth for source/drain. In addition, H/sub 2/-diluted phosphorus PIII can promote dopant activation more efficiently during RTA at 600/spl deg/C than with conventional ion implantation (II) technology. The excellent characteristics of PIII doped poly-Si TFTs resemble those of conventional II doped ones.
Keywords :
elemental semiconductors; ion implantation; plasma materials processing; rapid thermal annealing; semiconductor doping; silicon; thin film transistors; 600 C; H/sub 2/ dilution; RTA; Si:P; dopant activation; junction depth; low temperature processing; plasma immersion ion implantation doping; polysilicon thin film transistor; Active matrix technology; Contamination; Doping; Furnaces; Ion implantation; Plasma immersion ion implantation; Rapid thermal annealing; Space vector pulse width modulation; Substrates; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
