DocumentCode :
1443857
Title :
Improvement of hot carrier reliability with deuterium anneals for manufacturing multilevel metal/dielectric MOS systems
Author :
Kizilyalli, I.C. ; Abeln, G.C. ; Chen, Z. ; Lee, J. ; Weber, G. ; Kotzias, B. ; Chetlur, S. ; Lyding, J.W. ; Hess, K.
Author_Institution :
Bell Labs., Lucent Technol., Orlando, FL, USA
Volume :
19
Issue :
11
fYear :
1998
Firstpage :
444
Lastpage :
446
Abstract :
This paper discusses new experimental findings critical for process integration of deuterium post-metal anneals to improve channel hot carrier reliability in manufacturing multilevel metal CMOS integrated circuits. Detailed account of the deuterium process optimization experiments varying temperature, time, and ambient is given. Specifically, the first demonstration of the large hydrogen/deuterium isotope effect for multilevel metal/dielectric MOS systems is reported. Previous accounts of the isotope effect had been limited to CMOS structures with one-level of dielectric/metal and to about a 10 fold improvement in reliability. Deuterium, instead of hydrogen is introduced via an optimized post-metal anneal process to achieve a 50-100 fold improvement in transistor channel hot carrier lifetime. The benefits of the deuterium anneal are still observed even if the post-metal anneal is followed by the final SiN cap wafer passivation process. It is concluded that the deuterium post-metal anneal process is suitable for manufacturing high performance CMOS products and fully compatible with traditional integrated circuit processes.
Keywords :
CMOS integrated circuits; annealing; carrier lifetime; deuterium; hot carriers; integrated circuit metallisation; integrated circuit reliability; isotope effects; CMOS integrated circuit manufacture; D/sub 2/; SiN cap wafer passivation; deuterium annealing; hot carrier lifetime; hot carrier reliability; isotope effect; multilevel metal/dielectric MOS system; process integration; process optimization; Annealing; CMOS integrated circuits; Deuterium; Dielectrics; Hot carriers; Hydrogen; Integrated circuit manufacture; Integrated circuit reliability; Isotopes; Manufacturing processes;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.728907
Filename :
728907
Link To Document :
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