• DocumentCode
    1444048
  • Title

    Thermal Noise in MOSFETs: A Two- or a Three-Parameter Noise Model?

  • Author

    Emam, Mostafa ; Sakalas, Paulius ; Vanhoenacker-Janvier, Danielle ; Raskin, Jean-Pierre ; Lim, Tao Chuan ; Danneville, François

  • Author_Institution
    Microwave Lab., Univ. Catholique de Louvain, Louvain-La-Neuve, Belgium
  • Volume
    57
  • Issue
    5
  • fYear
    2010
  • fDate
    5/1/2010 12:00:00 AM
  • Firstpage
    1188
  • Lastpage
    1191
  • Abstract
    In this brief, it is clearly demonstrated that a two-parameter noise model is sufficient to accurately extract the MOSFET high-frequency noise performance, as long as channel uniformity is ensured (which corresponds to mainstream CMOS technology). Nevertheless, in the case of asymmetric channel-based MOSFETs, it is shown that a three-parameter noise model is required.
  • Keywords
    MOSFET; thermal noise; asymmetric channel-based MOSFET; thermal noise; three-parameter noise model; two-parameter noise model; CMOS technology; FETs; HEMTs; Laboratories; MODFETs; MOSFETs; Semiconductor device modeling; Semiconductor device noise; Silicon on insulator technology; Voltage; Graded-channel MOS (GCMOS); mainstream MOSFETs; modeling; noise correlation coefficient; silicon on insulator (SOI); thermal noise;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2010.2044286
  • Filename
    5433008
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1444048