A Simulation Study of the Punch-Through-Assisted Hot Hole Injection Mechanism for Nonvolatile Memory Cells

Author

Iellina, Matteo ; Palestri, Pierpaolo ; Akil, Nader ; Van Duuren, Michiel J. ; Driussi, Francesco ; Esseni, David ; Selmi, Luca

Author_Institution

Dipt. di Ing. Elettr., Gestionale e Meccanica, Univ. of Udine, Udine, Italy

Volume

57

Issue

5

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

1055

Lastpage

1062

Abstract

In this paper, we investigate the operating principle and the injection efficiency of the punch-through-assisted hot hole injection mechanism for programming nonvolatile memory cells by means of full-band Monte Carlo transport simulations of realistic device structures. The effects of terminal bias and cell scaling on the injection efficiency and the uniformity of charge injection along the channel are analyzed in detail.

Keywords

Monte Carlo methods; random-access storage; cell scaling; charge injection; full-band Monte Carlo transport simulations; programming nonvolatile memory cells; punch-through-assisted hot hole injection mechanism; terminal bias; Educational institutions; Electrons; Hot carriers; Monte Carlo methods; Nonvolatile memory; SONOS devices; Silicon compounds; Smart cards; Tunneling; Voltage; Hot carrier injection; Monte Carlo; nonvolatile memory; silicon-nitride;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2043396

Filename

5433059