Title :
U-shaped bilayer graphene channel transistor with very high Ion/Ioff ratio
Author :
Moktadir, Z. ; Boden, Stuart A. ; Ghiass, A. ; Rutt, H. ; Mizuta, Hiroshi
Author_Institution :
Sch. of Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK
Abstract :
A novel graphene transistor architecture is reported. The transistor has a U-shaped geometry and was fabricated using a gallium focused ion beam (FIB). The channel conductance was tuned with a back gate. The Ion/Ioff ratio exceeded 105.
Keywords :
field effect transistors; focused ion beam technology; gallium; graphene; FIB; Ga; U-shaped bilayer graphene channel transistor; U-shaped geometry; back gate; channel conductance; gallium focused ion beam;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.3029
