Modeling and information theoretic analysis of spin-torque transfer magnetic random access memory (STT-MRAM)

Spin-torque transfer magnetic random access memory (STT-MRAM) has emerged as a promising non-volatile memory (NVM) technology, which has compelling advantages in scalability, speed, endurance, and power consumption. In this paper, we first propose a resistance distribution based generic channel model for STT-MRAM. We then apply information theory and propose approaches to compute the mutual information and the capacity of the STT-MRAM channels. The presented information theoretic analysis provides valuable guideline for the design of practical channel coding and quantization schemes for STT-MRAM.