RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate

Author

Lecourt, Francois ; Ketteniss, N. ; Behmenburg, H. ; Defrance, Nicolas ; Hoel, Virginie ; Eickelkamp, M. ; Vescan, Andrei ; Giesen, C. ; Heuken, M. ; De Jaeger, J.C.

Author_Institution

Inst. of Electron., Microelectron. & Nanotechnol., Lille Univ., Villeneuve d´Ascq, France

Volume

47

Issue

3

fYear

2011

Firstpage

212

Lastpage

214

Abstract

DC and RF performances of an In_0.15Al_0.85N/AlN/GaN high electron mobility transistor (HEMT) on sapphire substrate with 8.3 nm barrier layer thickness are reported. The device provides a maximum DC current density of 1 A/mm and a peak extrinsic transconductance of 325 mS/mm. A current gain cutoff frequency (F_T) of 80 GHz and a power gain cutoff frequency (F_MAX) of 130 GHz are obtained for a 110 nm gate length transistor corresponding to the highest reported values from InAlN/AlN/GaN HEMTs grown on sapphire substrate.

Keywords

III-V semiconductors; MOCVD coatings; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; sapphire; wide band gap semiconductors; DC current density; InAlN-AlN-GaN; RF performances; barrier layer; current gain cutoff frequency; frequency 130 GHz; frequency 80 GHz; high electron mobility transistors; metalorganic chemical vapour deposition; power gain cutoff frequency; sapphire substrate; size 110 nm; size 8.3 nm;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2010.7512

Filename

5710078