• DocumentCode
    1444862
  • Title

    Edge effect in 3-phase surface-channel charge-coupled devices

  • Author

    Lamb, D.R. ; Singh, M.P. ; Roberts, P.C.T.

  • Author_Institution
    University of Southampton, Department of Electronics, Southampton, UK
  • Volume
    123
  • Issue
    5
  • fYear
    1976
  • fDate
    5/1/1976 12:00:00 AM
  • Firstpage
    389
  • Lastpage
    392
  • Abstract
    An analysis of surface-state trapping loss in surface-channel c.c.d.s has been carried out. By calculating the areas under the transfer gates occupied by different sized charge packets it has been shown that the edge effect is the dominant loss mechanism and that it cannot be eliminated by the use of fat-0s. Experimental results which confirm the theoretical predictions are presented.
  • Keywords
    charge-coupled devices; electron traps; surface electron states; CCD; edge effect; electrode; surface channel; surface state electron; transfer gates; trapping loss;
  • fLanguage
    English
  • Journal_Title
    Electrical Engineers, Proceedings of the Institution of
  • Publisher
    iet
  • ISSN
    0020-3270
  • Type

    jour

  • DOI
    10.1049/piee.1976.0088
  • Filename
    5253793
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1444862