Title :
Temperature Dependent Study of Random Telegraph Noise in Gate-All-Around PMOS Silicon Nanowire Field-Effect Transistors
Author :
Hong, B.H. ; Choi, L. ; Jung, Y.C. ; Hwang, S.W. ; Cho, K.H. ; Yeo, K.H. ; Kim, D.-W. ; Jin, G.Y. ; Park, D. ; Song, S.-H. ; Lee, Y. ; Son, M.H. ; Ahn, D.
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
Abstract :
We report the random telegraph noise observed in gate-all-around (GAA) PMOS silicon nanowire FETs (SNWFETs) with the radius of 5 nm, at various temperatures (s) down to 4.2 K. From the -dependence of the capture/emission time, we obtain the energy and the charging status of the trap states. The gate bias dependence and the -dependence of the scattering coefficient-mobility product extracted from the relative fluctuation amplitude of the drain current are consistent with the fact that the surface roughness scattering is dominant in GAA PMOS SNWFETs.
Keywords :
MOSFET; elemental semiconductors; nanowires; semiconductor device noise; semiconductor quantum wires; silicon; surface roughness; telegraphy; Si; capture-emission time; drain current; gate bias; gate-all-around PMOS silicon nanowire field-effect transistors; random telegraph noise; relative fluctuation amplitude; scattering coefficient-mobility product; size 5 nm; surface roughness scattering; temperature 4.2 K; trap states; Energy capture; FETs; Fluctuations; Rough surfaces; Scattering; Silicon; Surface charging; Surface roughness; Telegraphy; Temperature dependence; Gate all around (GAA); random telegraph noise (RTN); silicon nanowire FET (SNWFET); temperature dependence;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2010.2045006
