• DocumentCode
    1445027
  • Title

    High temperature operation of II-IV ridge-waveguide laser diodes

  • Author

    Legge, M. ; Bader, S. ; Bacher, G. ; Lugauer, H.-J. ; Waag, A. ; Forchel, A. ; Landwehr, G.

  • Author_Institution
    Tech. Phys., Wurzburg Univ., Germany
  • Volume
    34
  • Issue
    21
  • fYear
    1998
  • fDate
    10/15/1998 12:00:00 AM
  • Firstpage
    2032
  • Lastpage
    2034
  • Abstract
    Ridge-waveguide laser diodes based on beryllium chalcogenides have been realised. An extremely large temperature coefficient (T0=330 K at room temperature) allows device operation up to temperatures of 413 K. Lateral monomode emission is obtained with a ratio between the vertical and the lateral far field pattern of, for example, 1.2:1 for a stripe width of 1 μm
  • Keywords
    II-VI semiconductors; chalcogenide glasses; ridge waveguides; semiconductor lasers; semiconductor superlattices; zinc compounds; 1 micron; 413 K; II-IV ridge-waveguide laser diodes; ZnSe-Be0.06Zn0.94Se; device operation; lateral far field pattern; lateral monomode emission; stripe width; temperature coefficient;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981444
  • Filename
    729888
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1445027