DocumentCode :
1445033
Title :
Hybrid mirror VCSEL with sub-100 μA threshold current emitting at 850 nm wavelength
Author :
Langenfelder, T. ; Grothe, H.
Author_Institution :
Lehrstuhl fur Allgemeine Elektrotechnik und Angewandte Elektronik, Tech. Univ. Munchen, Germany
Volume :
34
Issue :
21
fYear :
1998
fDate :
10/15/1998 12:00:00 AM
Firstpage :
2034
Lastpage :
2035
Abstract :
The authors report a hybrid mirror GaAs quantum-well vertical-cavity surface-emitting laser with intracavity contacts, an n-side AlAs/GaAlAs and a p-side SiO2/Si3N4 distributed Bragg reflector. Selectively oxidised AlAs is used for current confinement under the top mirror. Record low threshold currents of 88 and 75 μA are measured at an emission wavelength of 850 nm for circular devices with 6 and 1.8 μm diameter, respectively
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; quantum well lasers; surface emitting lasers; 1.8 micron; 6 micron; 75 muA; 850 nm; 88 muA; GaAs-AlGaAs-AlAs; circular devices; current confinement; distributed Bragg reflector; emission wavelength; hybrid mirror VCSEL; intracavity contacts; quantum-well vertical-cavity surface-emitting laser; threshold current;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19981403
Filename :
729890
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1445033
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