• DocumentCode
    1445033
  • Title

    Hybrid mirror VCSEL with sub-100 μA threshold current emitting at 850 nm wavelength

  • Author

    Langenfelder, T. ; Grothe, H.

  • Author_Institution
    Lehrstuhl fur Allgemeine Elektrotechnik und Angewandte Elektronik, Tech. Univ. Munchen, Germany
  • Volume
    34
  • Issue
    21
  • fYear
    1998
  • fDate
    10/15/1998 12:00:00 AM
  • Firstpage
    2034
  • Lastpage
    2035
  • Abstract
    The authors report a hybrid mirror GaAs quantum-well vertical-cavity surface-emitting laser with intracavity contacts, an n-side AlAs/GaAlAs and a p-side SiO2/Si3N4 distributed Bragg reflector. Selectively oxidised AlAs is used for current confinement under the top mirror. Record low threshold currents of 88 and 75 μA are measured at an emission wavelength of 850 nm for circular devices with 6 and 1.8 μm diameter, respectively
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; quantum well lasers; surface emitting lasers; 1.8 micron; 6 micron; 75 muA; 850 nm; 88 muA; GaAs-AlGaAs-AlAs; circular devices; current confinement; distributed Bragg reflector; emission wavelength; hybrid mirror VCSEL; intracavity contacts; quantum-well vertical-cavity surface-emitting laser; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981403
  • Filename
    729890
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1445033