• DocumentCode
    1445037
  • Title

    Longitudinal mode grouping in InGaAs/GaAs/AlGaAs quantum dot lasers: origin and means of control

  • Author

    O´Reilly, E.P. ; Onischenko, A.I. ; Avrutin, E.A. ; Bhattacharyya, D. ; Marsh, John H.

  • Author_Institution
    Dept. of Phys., Surrey Univ., Guildford
  • Volume
    34
  • Issue
    21
  • fYear
    1998
  • fDate
    10/15/1998 12:00:00 AM
  • Firstpage
    2035
  • Lastpage
    2037
  • Abstract
    It is proposed that the recently observed quasi-periodic modulation of the emission spectra of quantum dot lasers is due to interference effects associated with waveguide leakage into the substrate. Such effects could be positively engineered to control laser spectra in such devices
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; light interference; optical modulation; semiconductor lasers; semiconductor quantum dots; InGaAs-GaAs-AlGaAs; emission spectra; interference effects; laser spectra control; longitudinal mode grouping; quantum dot lasers; quasi-periodic modulation; waveguide leakage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981397
  • Filename
    729892