DocumentCode :
1445131
Title :
Effect of Deposition Temperature on the Epitaxial Growth of YBCO Thin Films on RABiTS Substrates by Pulsed Laser Deposition Method
Author :
Liu, Linfei ; Zhao, Zuncheng ; Liu, Huaran ; Li, Yijie
Author_Institution :
Dept. of Phys., Shanghai Jiao Tong Univ., Shanghai, China
Volume :
20
Issue :
3
fYear :
2010
fDate :
6/1/2010 12:00:00 AM
Firstpage :
1553
Lastpage :
1556
Abstract :
Epitaxial YBCO thin films were grown on CeO2/YSZ/CeO2 buffered RABiTS substrates by PLD method and the effects of deposition temperature on their microstructure and the critical current were studied. YBCO thin films were prepared with substrate temperature from 700 to 820??C. The YBCO grown at below 740??C showed mixed a-axis and c-axis orientation, and the film grown at higher temperature showed high c-axis orientation. The (001) preferred orientation of the YBCO films was improved with increasing the temperature. While the critical current of the YBCO thin film increased firstly with increasing substrate temperature and had a maximum value at 770??C. The Ic of the YBCO film with 0.2 ??m thickness was 66 A (Jc = 3.3 MA/cm2) at 77 K and 0 T external field.
Keywords :
barium compounds; critical currents; crystal microstructure; crystal orientation; pulsed laser deposition; superconducting epitaxial layers; yttrium compounds; CeO2-Y2O3Zr2O3-CeO2; RABiTS substrates; YBCO; critical current; epitaxial thin films; microstructure; mixed a-axis orientation; mixed c-axis orientation; pulsed laser deposition method; temperature 700 degC to 820 degC; Coated conductors; PLD; RABiTS; YBCO;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/TASC.2010.2040475
Filename :
5433259
Link To Document :
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