Title :
Derived distribution for electrical overstress failure thresholds of transistors
Author :
Wheless, W.P., Jr. ; Wurtz, L.T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Alabama Univ., Tuscaloosa, AL, USA
fDate :
10/15/1998 12:00:00 AM
Abstract :
Electrical overstress failure may be analysed as a manifestation of plasma instabilities in semiconductors. The alternative Wunsch-Bell thermal paradigm is also useful for practical failure modelling, and is the basis for the derivation of the new probability density function presented
Keywords :
bipolar transistors; electrostatic discharge; failure analysis; semiconductor device models; semiconductor plasma; Wunsch-Bell thermal model; electrical overstress failure; plasma instability; probability density function; semiconductor; threshold distribution; transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981418
