DocumentCode
1445164
Title
Effect of atmosphere on reliability of passivated 0.15 μm InAlAs/InGaAs HEMTs
Author
Dammann, Michael ; Chertouk, M. ; Jantz, W. ; Kohler, Klaus ; Schmidt, Heidemarie ; Weimann, G.
Author_Institution
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg
Volume
34
Issue
21
fYear
1998
fDate
10/15/1998 12:00:00 AM
Firstpage
2064
Lastpage
2066
Abstract
The influence of ambient atmosphere on the long term stability of InP-based HEMTs has been investigated. By performing accelerated stress tests at elevated temperature the authors found that the electrical parameter drift is much faster in air than in nitrogen. The importance of a stabilisation bake in nitrogen after the fabrication process is demonstrated
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; life testing; passivation; semiconductor device reliability; 0.15 micron; InAlAs-InGaAs; InAlAs/InGaAs HEMT; InP; InP substrate; accelerated stress test; ambient atmosphere; electrical parameter drift; fabrication; passivation; reliability; stabilisation bake; stability;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981383
Filename
729943
Link To Document