DocumentCode :
1445172
Title :
Low frequency noise analysis of LT-GaAs and LT-Al0.3Ga 0.7As MISFET active layers
Author :
Chong, T.C. ; Lau, W.S. ; Tan, Leng Seow ; Geng, C. ; Lim, Norman
Volume :
34
Issue :
21
fYear :
1998
fDate :
10/15/1998 12:00:00 AM
Firstpage :
2066
Lastpage :
2067
Abstract :
Noise spectroscopy has been used to assess the quality of the active layers of LT-GaAs and LT-Al0.3Ga0.7As MISFET devices using transmission line model structures. Noise spectra were studied as a function of insulator thickness. LT-Al0.3Ga 0.7As samples and a 500 Å thick LT-GaAs sample exhibited 1/f noise. The noise parameter αlatt was found to be of the order 10-4 for these samples. 2000 Å LT-GaAs samples exhibited 1/f3/2 noise with 500 Hz corner frequency
Keywords :
1/f noise; III-V semiconductors; MISFET; aluminium compounds; gallium arsenide; semiconductor device models; semiconductor device noise; 1/f noise; 2000 angstrom; 500 Hz; 500 angstrom; Al0.3Ga0.7As; GaAs; MISFET active layers; active layer quality; corner frequency; insulator thickness; low frequency noise analysis; noise spectroscopy; transmission line model structures;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19981393
Filename :
729946
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1445172
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