DocumentCode
1445179
Title
Proportional difference operator method and its application to studying the saturation characteristics of MOSFETs
Author
Tan, Changhua ; Xu, Mingzhen ; Wang, Jinyan ; Xie, Bing ; He, Yandong
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
Volume
34
Issue
21
fYear
1998
fDate
10/15/1998 12:00:00 AM
Firstpage
2067
Lastpage
2069
Abstract
The proportional difference operator method is used to study the saturation characteristics of a long-channel MOSFET. The proportional difference operator has the property that the operation result for a function with saturation behaviour has a spectral nature. The most important static parameters (such as saturation current, voltage and threshold voltage) can be directly and simply determined and studied by the proportional difference operator method
Keywords
MOSFET; carrier mobility; semiconductor device models; long-channel MOSFET; proportional difference operator method; saturation behaviour; saturation characteristics; saturation current; static parameters; threshold voltage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981396
Filename
729949
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