DocumentCode :
1445242
Title :
Asymmetric Carrier Conduction Mechanism by Tip Electric Field in 
Resistance Switching Device
Author :
Syu, Yong-En ; Chang, Ting-Chang ; Tsai, Tsung-Ming ; Chang, Geng-Wei ; Chang, Kuan-Chang ; Lou, Jyun-Hao ; Tai, Ya-Hsiang ; Tsai, Ming-Jinn ; Wang, Ying-Lang ; Sze, Simon M.
Author_Institution :
Dept. of Phys., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Volume :
33
Issue :
3
fYear :
2012
fDate :
3/1/2012 12:00:00 AM
Firstpage :
342
Lastpage :
344
Abstract :
Resistance random access memory (RRAM) is a great potential candidate for next-generation nonvolatile memory due to the outstanding memory characteristic. However, the resistance switching mechanism is still a riddle nowadays. In this letter, the switching mechanism is investigated by current-voltage (I-V) curve fitting in the TiN/WSiOX/Pt RRAM device. The asymmetric phenomenon of the carrier conduction behavior is explained at the high-resistance state in high electric field. The switching behavior is regarded to tip electric field by localizing the filament between the interface of top electrode and insulator.
Keywords :
curve fitting; electric fields; insulators; platinum; random-access storage; silicon compounds; titanium compounds; tungsten compounds; RRAM device; TiN-WSiOX-Pt; asymmetric carrier conduction mechanism; current-voltage curve fitting; high-resistance state; insulator; next-generation nonvolatile memory; resistance random access memory; resistance switching device; tip electric field; top electrode; Educational institutions; Electrodes; Resistance; Sun; Switches; Tin; Voltage measurement; Nonvolatile memory; resistance switching; tip electric field; tungsten silicide (WSi);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2182600
Filename :
6151005
Link To Document :
