Random Telegraph Noise in 1X-nm CMOS Silicide Contacts and a Method to Extract Trap Density

Author

Chen, Min-Cheng ; Lin, Chia-Yi ; Chen, Bo-Yuan ; Lin, Chang-Hsien ; Huang, Guo-Wei ; Ho, Chia-Hua ; Wang, Tahui ; Hu, Chenming ; Yang, Fu-Liang

Author_Institution

Nat. Nano Device Labs., Hsinchu, Taiwan

Volume

33

Issue

4

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

591

Lastpage

593

Abstract

The behavior of random telegraph noise was affected by nickel silicide barrier height engineering in advanced nano-CMOS technologies. Contact resistance fluctuations with magnitude of up to 40% were observed when a Schottky barrier was reduced to 0.2 eV. The large contact resistance instability is attributed to the barrier modification by positive charge trapping and detrapping in a Schottky contact. The prevalence and magnitude of the noise are dependent on the contact area, trap density, trap energy, and the silicide Schottky barrier height. In this letter, we propose a fast method to extract the density of responsible contact traps.

Keywords

CMOS integrated circuits; Schottky barriers; contact resistance; electron density; electron traps; CMOS silicide contacts; Schottky barrier; barrier height engineering; barrier modification; contact resistance fluctuations; large contact resistance instability; nanoCMOS technologies; positive charge trapping; random telegraph noise; trap density; trap energy; Contact resistance; Electrical resistance measurement; Electron traps; Noise; Schottky barriers; Silicides; Silicon; Contact resistance; Poisson distribution; random telegraph noise (RTN); silicide-process-induced traps;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2182029

Filename

6151006