A Self-Rectifying $\hbox {HfO}_{x}$ -Based Unipolar RRAM With NiSi Electrode

In this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfO_x/TiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (>; 10³ at 1 V); 3) well-behaved memory performance, such as high on/off resistance ratio (>; 10²) and good retention characteristics (>;10⁵ s at 125 ^°C ); and 4) wide readout margin for high-density cross-point memory devices (number of word lines 10⁶ for the worst case condition).