DocumentCode :
1445348
Title :
A Self-Rectifying 
-Based Unipolar RRAM With NiSi Electrode
Author :
Tran, X.A. ; Zhu, W.G. ; Gao, B. ; Kang, J.F. ; Liu, W.J. ; Fang, Z. ; Wang, Z.R. ; Yeo, Y.C. ; Nguyen, B.Y. ; Li, M.F. ; Yu, H.Y.
Author_Institution :
Sch. of EEE, Nanyang Technol. Univ., Singapore, Singapore
Volume :
33
Issue :
4
fYear :
2012
fDate :
4/1/2012 12:00:00 AM
Firstpage :
585
Lastpage :
587
Abstract :
In this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfOx/TiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (>; 103 at 1 V); 3) well-behaved memory performance, such as high on/off resistance ratio (>; 102) and good retention characteristics (>;105 s at 125 °C ); and 4) wide readout margin for high-density cross-point memory devices (number of word lines 106 for the worst case condition).
Keywords :
CMOS memory circuits; electric resistance; electrodes; hafnium compounds; nickel alloys; random-access storage; readout electronics; silicon alloys; titanium compounds; CMOS-technology-friendly materials; NiSi electrode; NiSi-HfOx-TiN; high-density cross-point memory device; low-resistance state; memory performance; on-off resistance ratio; readout margin; retention characteristics; self-rectifying HfOx-based unipolar RRAM; unipolar resistive switching random access memory; Arrays; Electrodes; Hafnium compounds; Random access memory; Resistance; Switches; Tin; Resistive random access memory (RAM) (RRAM); resistive switching; self-rectify; unipolar;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2181971
Filename :
6151020
Link To Document :
