DocumentCode :
1445375
Title :
Vapor–Solid–Solid Growth of NiSi 
Nanocrystals for Memory Application
Author :
Li, Bei ; Liu, Jianlin ; Gann, Reuben D. ; Yarmoff, Jory A. ; Zhu, Yu
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA
Volume :
10
Issue :
5
fYear :
2011
Firstpage :
1120
Lastpage :
1125
Abstract :
NiSi2 nanocrystals were synthesized by vapor-solid-solid process, introducing SiH4 onto Ni catalyst dots on a SiO2 substrate, for nonvolatile memory applications. Electron microscopy was used to characterize the morphology and X-ray photoelectron spectroscopy characterization confirmed the nature of these NiSi2 nanocrystals. mosfet memory with NiSi2 nanocrystal as floating gate was fabricated and fast programming/erasing speed, long retention, and 105 times of operation endurance performances were demonstrated.
Keywords :
MOSFET; X-ray photoelectron spectra; electron microscopy; nanofabrication; nanostructured materials; nickel compounds; random-access storage; MOSFET memory; NiSi2; SiO2; X-ray photoelectron spectroscopy; catalyst dot; electron microscopy; erasing speed; floating gate; morphology; nanocrystals; nonvolatile memory; operation endurance performance; programming speed; retention performance; vapor-solid-solid growth; Logic gates; Nanocrystals; Nickel; Nonvolatile memory; Programming; Silicon; Threshold voltage; NiSi$_2$
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2011.2112774
Filename :
5710426
Link To Document :
