Composite HfO2/Al2O3-dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation

Author

Ching-Sung Lee ; Hung-Shi Huang ; Wei-Hsin Shung ; Ting-Ting Wu ; Cheng-Lung Yang ; Chuan-Chung Yeh ; Yu-Hao Liao ; Bo-Yi Chou ; Han-Yin Liu ; Wei-Chou Hsu

Author_Institution

Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan

Volume

2

fYear

2014

fDate

26-28 April 2014

Firstpage

769

Lastpage

771

Abstract

Enhanced device characteristics of InGaAs/AlGaAs MOS-HEMTs with HfO₂/Al₂O₃ stacked dielectrics by separately using RF sputtering and ozone water oxidization are investigated in this work. Improved interfacial quality is verified by the measured 1/f spectra and C-V characteristics. k values of the HfO₂/Al₂O₃ dielectrics are extracted to be 21.5/9.2, respectively. The effective oxide thickness (EOT) is 5.15 nm. The present MOS-HEMT has shown comprehensive improvements in intrinsic voltage gain (A_V) and high-frequency performances. The present MOS-HEMT design is promising for MMIC applications.

Keywords

III-V semiconductors; MOSFET; aluminium compounds; composite materials; gallium arsenide; hafnium compounds; high electron mobility transistors; indium compounds; oxidation; ozone; sputter deposition; 1/f spectra; C-V characteristics; HfO₂-Al₂O₃; InGaAs-AlGaAs; MOS-HEMT; RF sputtering; composite-dielectric; effective oxide thickness; high-frequency performances; interfacial quality; intrinsic voltage gain; ozone water oxidation; stacked dielectrics; Aluminum oxide; Dielectrics; Gases; HEMTs; Hafnium compounds; Logic gates; MODFETs; HfO2/Al2O3 stacked dielectrics; MOS-HEMT; ozone water oxidation;

fLanguage

English

Publisher

ieee

Conference_Titel

Information Science, Electronics and Electrical Engineering (ISEEE), 2014 International Conference on

Conference_Location

Sapporo

Print_ISBN

978-1-4799-3196-5

Type

conf

DOI

10.1109/InfoSEEE.2014.6947770

Filename

6947770