Title :
Threshold temperature dependence of lateral-cavity quantum-dot lasers
Author :
Zou, Z. ; Shchekin, O.B. ; Park, G. ; Huffaker, D.L. ; Deppe, D.G.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
The threshold temperature dependence for quantum-dot (QD) lasers with different degrees of inhomogeneous broadening are compared. By reducing the inhomogeneous linewidth, the "negative" temperature dependence due to thermal coupling of the QD ensemble can be nearly eliminated, Stable ground state lasing is obtained with a single-layer QD density of -5/spl times/10/sup 10/ cm/sup -2/ for a long cavity laser, while lower gain QDs and shorter cavity lengths lase on well-resolved higher energy levels.
Keywords :
energy states; laser cavity resonators; laser stability; quantum well lasers; semiconductor quantum dots; spectral line broadening; inhomogeneous broadening; inhomogeneous linewidth; lateral-cavity quantum-dot lasers; long cavity laser; lower gain QDs; negative temperature dependence; shorter cavity lengths; single-layer QD density; stable ground state lasing; thermal coupling; threshold temperature dependence; well-resolved higher energy level lasing; Energy states; Epitaxial growth; Gallium arsenide; Land surface temperature; Quantum dot lasers; Quantum dots; Quantum well lasers; Stationary state; Temperature dependence; Temperature distribution;
Journal_Title :
Photonics Technology Letters, IEEE
