Threshold temperature dependence of lateral-cavity quantum-dot lasers

Author

Zou, Z. ; Shchekin, O.B. ; Park, G. ; Huffaker, D.L. ; Deppe, D.G.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

10

Issue

12

fYear

1998

Firstpage

1673

Lastpage

1675

Abstract

The threshold temperature dependence for quantum-dot (QD) lasers with different degrees of inhomogeneous broadening are compared. By reducing the inhomogeneous linewidth, the "negative" temperature dependence due to thermal coupling of the QD ensemble can be nearly eliminated, Stable ground state lasing is obtained with a single-layer QD density of -5/spl times/10/sup 10/ cm/sup -2/ for a long cavity laser, while lower gain QDs and shorter cavity lengths lase on well-resolved higher energy levels.

Keywords

energy states; laser cavity resonators; laser stability; quantum well lasers; semiconductor quantum dots; spectral line broadening; inhomogeneous broadening; inhomogeneous linewidth; lateral-cavity quantum-dot lasers; long cavity laser; lower gain QDs; negative temperature dependence; shorter cavity lengths; single-layer QD density; stable ground state lasing; thermal coupling; threshold temperature dependence; well-resolved higher energy level lasing; Energy states; Epitaxial growth; Gallium arsenide; Land surface temperature; Quantum dot lasers; Quantum dots; Quantum well lasers; Stationary state; Temperature dependence; Temperature distribution;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.730465

Filename

730465