Single-transverse mode and stable-polarization operation under high-speed modulation of InGaAs-GaAs vertical-cavity surface-emitting laser grown on GaAs (311) B substrate

Author

Nishiyama, N. ; Mizutani, A. ; Hatori, N. ; Arai, M. ; Koyama, F. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Japan

Volume

10

Issue

12

fYear

1998

Firstpage

1676

Lastpage

1678

Abstract

We have demonstrated an oxide confinement vertical-cavity surface-emitting laser grown on a GaAs (311)B substrate, and achieved single-transverse mode and single-polarization operation in the entire tested current range. The threshold was 0.6 mA for a 2.7 μm×2.9 μm oxide aperture. Even under high-speed modulation up to 5 GHz, the device showed stable single-transverse mode and polarization. Sidemode suppression ratio and orthogonal polarization suppression ratio were over 30 and 10 dB, respectively.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; laser modes; laser stability; light polarisation; quantum well lasers; surface emitting lasers; 0.6 mA; 2.7 mum; 2.9 mum; GaAs; GaAs (311) B substrate; InGaAs-GaAs; InGaAs-GaAs vertical-cavity surface-emitting laser; entire tested current range; high-speed modulation; orthogonal polarization suppression ratio; oxide aperture; oxide confinement vertical-cavity surface-emitting laser; sidemode suppression ratio; single-polarization operation; single-transverse laser mode; single-transverse mode; stable single-transverse mode; stable-polarization operation; Apertures; Data communication; Distributed Bragg reflectors; Gallium arsenide; Laser modes; Optical interconnections; Optical polarization; Surface emitting lasers; Testing; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.730466

Filename

730466