Comparison of GaN p-i-n and Schottky rectifier performance

Author

Zhan, A.P. ; Dang, G.T. ; Fan Ren ; Hyun Cho ; Kyu-Pil Lee ; Pearton, S.J. ; Jenn-Inn Chyi ; Nee, T.-Y. ; Chuo, C.-C.

Author_Institution

Dept. of Chem. Eng., Florida Univ., Gainesville, FL, USA

Volume

48

Issue

3

fYear

2001

fDate

3/1/2001 12:00:00 AM

Firstpage

407

Lastpage

411

Abstract

The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for the Schottky diodes) and forward turn-on voltage (~5 V for the p-i-n diodes; ~3.5 V for the Schottky diodes). Both types of device showed a negative temperature coefficient for reverse breakdown, with value -0.34±0.05 V·K^-1

Keywords

III-V semiconductors; Schottky diodes; gallium compounds; p-i-n diodes; power semiconductor diodes; semiconductor device breakdown; solid-state rectifiers; wide band gap semiconductors; 3.5 V; 347 V; 490 V; 5 V; GaN; I-V characteristics; Schottky diodes; Schottky rectifiers; device size dependence; forward turn-on voltage; negative temperature coefficient; operating temperature dependence; p-i-n diodes; p-i-n rectifiers; performance comparison; power electronics; reverse breakdown voltage; Dry etching; Gallium nitride; P-i-n diodes; PIN photodiodes; Photonic band gap; Rectifiers; Schottky diodes; Silicon carbide; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.906427

Filename

906427