High brightness visible (660 nm) resonant-cavity light-emitting diode

Author

Streubel, K. ; Helin, U. ; Oskarsson, V. ; Backlin, E. ; Johansson, A.

Author_Institution

Mitel Semicond. AB, Jarfalla, Sweden

Volume

10

Issue

12

fYear

1998

Firstpage

1685

Lastpage

1687

Abstract

Visible (660 nm) resonant-cavity light-emitting (RCLEDs) have been fabricated. The top-emitting devices employed two AlGaAs-AlAs-Bragg mirrors and GaInP-AlGaInP quantum-well active layers. The device performance was characterized as a function of the device diameters, ranging from 24 to 202 μm. The larger devices exhibited a nearly linear increase of output power with injected current with 8.4-mW emission at 120 mA. A maximum external efficiency of 4.8% was measured at 4 mA on the 84-μm aperture devices. All devices exhibited a narrow emission at 659-661 nm with a linewidth around 3 nm. The results show that RCLED´s are promising low-cost light sources for plastic fiber transmission as well as display applications.

Keywords

III-V semiconductors; aluminium compounds; brightness; gallium compounds; indium compounds; light emitting diodes; mirrors; optical fabrication; 120 mA; 24 to 204 mum; 4 mA; 4.8 percent; 659 to 661 nm; 660 nm; 8.4 W; 84 mum; AlGaAs-AlAs; AlGaAs-AlAs-Bragg mirrors; GaInP-AlGaInP; GaInP-AlGaInP quantum-well active layers; device diameters; display applications; high brightness visible resonant-cavity light-emitting diode; injected current; linewidth; low-cost light sources; mW emission; maximum external efficiency; narrow emission; output power; plastic fiber transmission; top-emitting devices; Apertures; Brightness; Displays; Light sources; Mirrors; Optical fiber devices; Plastics; Power generation; Quantum well devices; Resonance;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.730469

Filename

730469