Title :
Monolithically integrated quantum-confined stark effect tuned laser with uniform frequency modulation response
Author :
Huang, X. ; Seeds, A.J. ; Roberts, J.S. ; Knights, A.P.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
Abstract :
Conventional tunable semiconductor lasers tuned by the carrier induced effect suffer from intrinsically nonuniform optical frequency modulation (FM) response due to the associated thermal effect. Electric field effect tuned lasers involving no current injection, offer intrinsically uniform FM response. We report here the first quantum-confined Stark effect tuned two-section ridge waveguide laser fabricated by postgrowth band gap engineering techniques. An highly uniform FM response, within /spl plusmn/3 dB from 30 kHz to 6 GHz, is achieved, independent of laser output power, the widest and most uniform response yet reported for a field effect tuned laser. The residual intensity modulation is less than 5% for 4.5-GHz peak frequency deviation.
Keywords :
electro-optical modulation; frequency modulation; integrated optoelectronics; laser tuning; quantum confined Stark effect; quantum well lasers; thermo-optical effects; GHz peak frequency deviation; carrier induced effect; electric field effect; field effect tuned laser; highly uniform FM response; intrinsically nonuniform optical frequency modulation; laser output power; monolithically integrated quantum-confined stark effect tuned laser; postgrowth band gap engineering techniques; quantum-confined Stark effect tuned two section ridge waveguide laser; residual intensity modulation; thermal effect; tunable semiconductor lasers; uniform FM response; uniform frequency modulation response; uniform response; Frequency modulation; Laser tuning; Optical modulation; Optical waveguides; Power lasers; Semiconductor lasers; Semiconductor waveguides; Stark effect; Tunable circuits and devices; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE