Title :
Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterojunction modulation doped FETs
Author :
Sacconi, Fabio ; Di Carlo, Aldo ; Lugli, P. ; Morkoç, Hadis
Author_Institution :
Dept. of Electr. Eng., Rome Univ., Italy
fDate :
3/1/2001 12:00:00 AM
Abstract :
We report on the calculation of electrical characteristics of AlGaN/GaN heterojunction field effect transistors (HFETs). The model is based on the self-consistent solution of the Schrodinger and Poisson equations coupled to a quasi-2D model for the current flow. Both single and double heterojunction devices are analyzed for [0001] or [000-1] growth directions. The onset of a parasitic p-channel for particular growth directions and alloy concentrations is also shown
Keywords :
III-V semiconductors; Poisson equation; Schrodinger equation; aluminium compounds; carrier density; dielectric polarisation; gallium compounds; microwave field effect transistors; microwave power transistors; piezoelectric semiconductors; power HEMT; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; I-V characteristics; Poisson equation; Schrodinger equation; current flow; double heterojunction devices; electrical characteristics; heterojunction MODFET; output characteristics; parasitic p-channel onset; piezoelectric polarization effects; quasi-2D model; self-consistent solution; sheet carrier concentration; single heterojunction devices; spontaneous polarization effects; Aluminum gallium nitride; Epitaxial layers; FETs; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Piezoelectric polarization; Poisson equations; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
