Title :
The state-of-the-art of GaAs and InP power devices and amplifiers
Author :
Nguyen, Chanh ; Micovic, Miroslav
Author_Institution :
HRL Labs., Malibu, CA, USA
fDate :
3/1/2001 12:00:00 AM
Abstract :
Significant investments and R&D efforts over the past two decades have established GaAs and InP electronic device technologies from substrate manufacturing to MMIC amplifier design and testing. Today, GaAs and InP HBTs and HFETs, as far as gain, efficiency, and power are concerned, dominate the whole spectrum from S- to W-band and beyond. In this paper we discuss recent advances in device technologies and survey the state of the art performance of GaAs and InP HFETs and HBTs
Keywords :
III-V semiconductors; MMIC power amplifiers; bipolar MMIC; field effect MMIC; gallium arsenide; indium compounds; microwave bipolar transistors; microwave field effect transistors; microwave power transistors; power bipolar transistors; power field effect transistors; GaAs; HBTs; HFETs; III-V semiconductors; InP; MMIC amplifier; device technologies; efficiency; gain; Bandwidth; Frequency; Gallium arsenide; HEMTs; Indium phosphide; Linearity; MODFETs; Power amplifiers; Power generation; Spaceborne radar;
Journal_Title :
Electron Devices, IEEE Transactions on
