Title :
Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition
Author :
Shelton, Bryan S. ; Lambert, Damien J H ; Huang, Jian Jang ; Wong, Michael M. ; Chowdhury, Uttiya ; Zhu, Ting Gang ; Kwon, H.K. ; Liliental-Weber, Z. ; Benarama, M. ; Feng, Milton ; Dupuis, Russell D.
Author_Institution :
Emcore Corp., Somerset, NJ, USA
fDate :
3/1/2001 12:00:00 AM
Abstract :
The selective area growth (SAG) and properties of AlGaN/GaN heterojunction bipolar transistors (HBTs) grown by low-pressure metalorganic chemical vapor deposition (MOCVD) are described and analyzed. Transistors based on group III-nitride material are attractive for high-power and high-temperature applications. Much work has been focused on improving p-type material, as well as heterojunction interfaces. However, there have been very few reports on HBTs operating at room temperature, At this time, current gains for nitride-based HBTs have been limited to ~10. Selective area regrowth was applied to the growth of AlGaN/GaN HBTs to analyze its potential advantages as compared to more traditional growth techniques in order to realize improved electrical performance of the devices
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; heterojunction bipolar transistors; high-temperature electronics; power bipolar transistors; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; AlGaN-GaN; III-V semiconductors; current gains; electrical performance; heterojunction bipolar transistors; heterojunction interfaces; high-power applications; high-temperature applications; metalorganic chemical vapor deposition; selective area growth; Aluminum gallium nitride; Chemical analysis; Chemical vapor deposition; Etching; FETs; Gallium nitride; Heterojunction bipolar transistors; Laboratories; MOCVD; Microelectronics;
Journal_Title :
Electron Devices, IEEE Transactions on
