Title :
An X-band GaN HEMT power amplifier design using an artificial neural network modeling technique
Author :
Lee, Sang Yun ; Cetiner, Bedri Artug ; TORPI, Hamid ; Cai, S.J. ; Li, Jiang ; Alt, K. ; Chen, Y.L. ; Wen, Cheng P. ; Wang, Kang L. ; Itoh, Tatsuo
Author_Institution :
Dept. of Comput. & Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
3/1/2001 12:00:00 AM
Abstract :
In this paper, the first gallium nitride (GaN) based high electron mobility transistor (HEMT) power amplifier design using an artificial neural network (ANN) modeling technique is presented. The ANN technique was used to model the small signal behavior of a device with a gate periphery of 1 mm and a gate length of 1 μm over the broad frequency range from 1 GHz to 26 GHz with multiple bias points, based on fitting calculated S-parameters to measured S-parameters. A single stage amplifier constructed using these parameters showed a gain of about 7 dB and an output power of 1.2 W at 8 GHz when biased at Vds = 20 V and Ids 220 mA in class AB mode. The good agreement between measured and simulated results was shown in both S-parameter modeling and in amplifier design
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; S-parameters; circuit CAD; field effect MMIC; gallium compounds; integrated circuit modelling; neural nets; 1 micron; 1 to 26 GHz; 1.2 W; 20 V; 220 mA; 7 dB; GaN; HEMT power amplifier; III-V semiconductors; X-band; artificial neural network modeling technique; calculated S-parameter fitting; class AB mode; gate length; gate periphery; multiple bias points; output power; power amplifier design; single stage amplifier; small signal behavior; Artificial neural networks; Frequency measurement; Gallium nitride; HEMTs; High power amplifiers; III-V semiconductor materials; Length measurement; MODFETs; Power amplifiers; Scattering parameters;
Journal_Title :
Electron Devices, IEEE Transactions on
