Title :
Application of GaN-based heterojunction FETs for advanced wireless communication
Author :
Ohno, Yasuo ; Kuzuhara, Masaaki
Author_Institution :
Photonic & Wireless Devices Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
3/1/2001 12:00:00 AM
Abstract :
We review the features of GaN-based FETs and describe their expected development direction, GaN has a high breakdown field, but this does not necessarily mean it is suitable for high-voltage and high-power applications. The main advantage is that it enables scaling down beyond the silicon MOSFET miniaturization limitation from the Maxwell-Boltzmann distribution. Thus, fine gate patterns together with a high carrier velocity make GaN-based FETs be suited for millimeter and near millimeter wavelength high-power applications. In addition, by using large-area sapphire substrates, high-performance and low-cost MMICs can be produced on GaN. We expect that such devices will be the key to future advanced wireless communication systems
Keywords :
III-V semiconductors; field effect MIMIC; field effect MMIC; gallium compounds; microwave field effect transistors; microwave links; microwave power transistors; millimetre wave field effect transistors; millimetre wave power transistors; power field effect transistors; wide band gap semiconductors; Al2O3; EHF; GaN; GaN-based HFETs; MM-wave high-power applications; Maxwell-Boltzmann distribution; SHF; SiC; SiC substrates; advanced wireless communication; device scaling; fine gate patterns; heterojunction FETs; high breakdown field; high carrier velocity; large-area sapphire substrates; low-cost MIMICs; low-cost MMICs; Electric breakdown; FETs; Gallium nitride; Heterojunctions; MMICs; MOSFET circuits; Millimeter wave communication; Millimeter wave devices; Silicon; Wireless communication;
Journal_Title :
Electron Devices, IEEE Transactions on
