Title :
Ultrafast all-optical switching in an asymmetric Fabry-Perot device using low-temperature-grown GaAs
Author :
Loka, H.S. ; Smith, P.W.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
We report the first ultrafast all-optical switching using low-temperature-grown bulk semiconductor material (LT-GaAs) in a compact asymmetric Fabry-Perot device. We obtain 3-ps response times, 2.8-dB insertion loss, 40-nm bandwidth, and 15-dB contrast ratios using 200-fJ/μm2 average switching energy flux.
Keywords :
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; integrated optics; optical losses; optical switches; reflectivity; symmetry; 2.8 dB; 3 ps; GaAs; asymmetric Fabry-Perot device; average switching energy flux; bulk semiconductor material; compact asymmetric Fabry-Perot device; contrast ratios; insertion loss; low-temperature-grown GaAs; ps response times; ultrafast all-optical switching; Absorption; Bandwidth; Fabry-Perot; Gallium arsenide; Mirrors; Optical losses; Page description languages; Quantum well devices; Reflectivity; Telecommunication switching;
Journal_Title :
Photonics Technology Letters, IEEE
